elektronische bauelemente SSD30N03J 30a, 30v, r ds(on) 22m n-ch enhancement mode power mosfet 13-dec-2016 rev. b page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. to - 252 cju30n03 = date code rohs compliant product a suffix of -c specifies halogen free description SSD30N03J uses advanced trench technology and desig n to provide excellent r ds(on) with low gate charge. it can be used in a wide variety of applications. features high density cell design for ultra low r ds(on) fully characterized avalanche voltage and current good stability and uniformity with high e as excellent package for good heat dissipation special processing technology for high esd capabili ty application power switching application hard switched and high frequency circuits uninterruptible power supply marking package information package mpq leader size to-252 2.5k 13 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current i d 30 a pulsed drain current i dm 80 a single pulsed avalanche energy 1 e as 72 mj power dissipation p d 1.25 w thermal resistance from junction to ambient r ja 100 c/ w junction and storage temperature range t j , t stg 150, -55~150 c notes: 1. e as condition: v dd =20v, l=0.5mh, r g =25 , starting t j =25c. 1 gate 3 source 2 drain a c d n o p g e f h k j m b millimeter millimeter ref. min. max. ref. min. max. a 6. 35 6.90 j 2.186 2.386 b 4.95 5.50 k 0.64 1.14 c 2.10 2. 50 m 0.50 1.14 d 0.43 0.9 n 1.3 1.8 e 6.0 7.5 o 0 0.13 f 2.90 ref p 0.58ref. g 5.40 6.40 h 0.60 1.20
elektronische bauelemente SSD30N03J 30a, 30v, r ds(on) 22m n-ch enhancement mode power mosfet 13-dec-2016 rev. b page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition off characteristics drain-source breakdown voltage v (br)dss 30 - - v v gs =0, i d =250 a zero gate voltage drain current i dss - - 1 a v ds =30v, v gs =0 gate-body leakage current i gss - - 100 na v ds =0v, v gs = 20v on characteristics 1 gate-threshold voltage v gs(th) 1 - 2.5 v v ds =v gs, i d =250 a static drain-source on-resistance r ds(on) - - 22 m v gs =10v, i d =15a dynamic characteristics input capacitance c iss - 938 - output capacitance c oss - 142 - reverse transfer capacitance c rss - 99 - pf v ds =15v v gs =0v f=1mhz switching characteristics total gate charge q g - 17.5 - gate-source charge q gs - 3 - gate-drain charge q gd - 4.1 - nc v ds =15v v gs =10v i d =20a turn-on delay time t d(on) - 5 - rise time t r - 12 - turn-off delay time t d(off) - 19 - fall time t f - 6 - ns v dd =15v v gs =10v r g =3 r l =0.75 i d =2a drain-source diode characteristics diode forward voltage 1 v sd - - 1.2 v v gs =0, i s =10a continuous drain-source diode forward current i s - - 30 a pulsed drain-source diode forward current i sm - - 80 a notes: 1. pulse test pulse width Q 300 s, duty cycle Q 2%.
elektronische bauelemente SSD30N03J 30a, 30v, r ds(on) 22m n-ch enhancement mode power mosfet 13-dec-2016 rev. b page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. ratings and characteristic curves
|
